MT16VDDT6464AG-40BG6 Micron Technology Inc, MT16VDDT6464AG-40BG6 Datasheet - Page 13

• Manufacturer Part Number: MT16VDDT6464AG-40BG6
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AG-40BG6

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.632A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 20–23; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 48, 49; notes appear on pages 20–23; 0°C
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
Relative to V
OUT
OUT
VIN
REF
DD
DD
= 0.373V, maximum V
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
VDD, VREF pin 0V
DD
VOUT
Q-0.373V, minimum V
VDDQ)
REF
VIN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#
CKE, S#
CK0, CK0#
CK1, CK1#
CK2, CK2#
DM
DQ, DQS
, minimum V
SYMBOL
V
V
V
REF
IH
IL
(
(
AC
(
AC
T
AC
TT
A
)
)
)
)
T
A
+70°C
13
256MB, 512MB, 1GB, 2GB (x64, DR)
TT
)
+70°C; V
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
SYMBOL
0.49 V
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
V
REF
V
V
V
IH
IL
V
I
DD
I
I
OH
Relative to V
T
OZ
OL
REF
MIN
DD
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
(
TT
I
184-PIN DDR SDRAM UDIMM
DC
DC
+ 0.310
A
DD
–
Q
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
)
)
DD
= V
Q
V
0.49 V
V
DD
REF
REF
Q = +2.5V ±0.2V
-16.8
MIN
16.8
-0.3
-32
-16
-12
-10
2.3
2.3
-8
-4
+ 0.15
- 0.04 V
V
0.51 V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51 V
- 0.310
–
DD
V
V
REF
REF
DD
Q
MAX
2.7
2.7
32
16
12
10
+ 0.04
8
4
–
–
- 0.15
+ 0.3
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
©2004 Micron Technology, Inc.
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
6
NOTES
32, 36
33, 34
Q +0.5V
6, 39
7, 39
25
25
47
47