MT18VDVF12872DY-335D4 Micron Technology Inc, MT18VDVF12872DY-335D4 Datasheet - Page 18

• Manufacturer Part Number: MT18VDVF12872DY-335D4
• Description: MODULE DDR 1GB 184DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT18VDVF12872DY-335D4

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 11:
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
Parameter/Condition
OPERATING CURRENT: One device bank; Active-Precharge;
t
per clock cyle; Address and control inputs changing once every two
clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4;
and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
DM andDQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge,
and control inputs change only during Active READ, or WRITE
commands
RC (MIN);
CK MIN; CKE = HIGH; Address and other control inputs changing
t
CK =
t
t
RC =
CK =
t
t
CK =
CK (MIN); I
I
DDR SDRAM Components Only
Notes: 1–5, 8, 10, 12, 47; notes appear on pages 22–26; 0°C ≤ T
DD
t
t
RC (MIN);
CK (MIN); DQ, DM and DQS inputs changing once
t
Specifications and Conditions – 512MB
CK (MIN); DQ, DM, and DQS inputs changing
IN
Note:
OUT
t
t
= V
RC =
RC =
t
CK =
t
CK =
t
= 0mA
REF
CK =
t
t
RC (MIN);
RAS (MAX);
t
for DQ, DQS, and DM
CK (MIN); CKE = (LOW)
t
ranks in I
b: Value calculated reflects all module ranks in this operating condition.
CK (MIN); I
a: Value calculated as one module rank in this operating condition, and all other module
t
CK (MIN); CKE = LOW
t
CK =
DD
t
CK =
OUT
2p (CKE LOW) mode.
t
t
t
CK (MIN); Address
REFC =
REFC = 7.8125µs
= 0mA; Address
t
CK (MIN); DQ,
t
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
RFC (MIN)
t
RC =
18
t
CK =
I
I
I
I
I
I
I
DD4W
I
Sym
I
DD3N
DD4R
I
DD5A
I
I
DD2P
DD3P
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD2F
DD 0 a
DD1
DD7
DD5
DD6
a
a
b
b
b
b
b
a
b
b
a
A
≤ +70°C; V
1,161
1,566
1,080
1,611
1,611
4,590
3,726
-335
900
540
108
72
72
DD
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
1,161
1,476
1,386
1,386
4,230
3,186
Max
-262
Electrical Specifications
810
450
900
108
72
72
= V
DD
Q = +2.5V ±0.2V
-26A/
1,341
1,386
1,386
4,230
3,186
-265
981
810
450
900
108
72
72
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
21, 28,
21, 28,
20, 41
20, 41
20, 41
20, 43
24, 43
20, 42
43
44
43
20
9