MT4VDDT1664HG-335F3 Micron Technology Inc, MT4VDDT1664HG-335F3 Datasheet - Page 13

• Manufacturer Part Number: MT4VDDT1664HG-335F3
• Description: MODULE SDRAM DDR 128MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT1664HG-335F3

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 19–22; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 49; notes appear on pages 19–22; 0°C
pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
OUTPUT LEVELS (Reduced drive option)
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
V
IN
V
DD
, V
OUT
OUT
OUT
OUT
REF
DD
DD
REF
SS
SS
SS
Q Supply
= V
= V
Supply
= 0.373V, maximum V
= 0.373V, maximum V
and Inputs
pin 0V
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
DD
Q - 0.373V, minimum V
Q - 0.373V, minimum V
V
OUT
V
IN
1.35V
V
DD
Q)
REF
REF
, maximum V
, maximum V
REF
REF
Command/
Address, RAS#,
CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
, minimum V
, minimum V
SYMBOL
V
V
V
T
REF
IH
IL
A
(
(
AC
(
AC
T
AC
A
+70°C
)
)
)
TT
TT
)
)
+70°C; V
13
TT
TT
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
SYMBOL
0.49
V
V
64MB, 128MB, 256MB (x64, SR)
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
DD
REF
V
V
IH
IL
V
I
I
I
200-PIN DDR SDRAM SODIMM
DD
I
I
OH
OH
REF
OZ
OL
OL
DD
I
(
Relative to V
TT
(
MIN
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
DC
DC
= V
+ 0.310
Q
A
–
)
)
V
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
DD
0.49 V
Q = +2.5V ±0.2V
Q
V
V
REF
REF
-16.8
MIN
16.8
-0.3
2.3
2.3
-8
-4
-2
-5
-9
+ 0.15
9
- 0.04
0.51
V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
- 0.310
–
V
DD
V
V
V
REF
REF
Q
DD
MAX
2.7
2.7
©2004 Micron Technology, Inc. All rights reserved.
+ 0.04
8
4
2
5
–
–
–
–
- 0.15
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 36
12, 25, 36
NOTES
DD
32, 37, 40
NOTES
6
32, 37
33, 35
34, 35
Q +0.5V
6, 40
7, 40
25
25
47
47