MT4VDDT1664HG-335F3 Micron Technology Inc, MT4VDDT1664HG-335F3 Datasheet - Page 15

• Manufacturer Part Number: MT4VDDT1664HG-335F3
• Description: MODULE SDRAM DDR 128MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT1664HG-335F3

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 13: I
DDR SDRAM component values only
Notes: 1–5, 8, 10, 14, 48; notes appear on pages 19–22; 0°C
pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
(MIN);
per clock cyle; Address and control inputs changing once every
two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4;
and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
DM andDQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge,
and control inputs change only during Active READ or WRITE
commands
CK (MIN); CKE = HIGH; Address and other control inputs changing
t
CK =
t
RC =
t
t
CK =
CK =
t
CK (MIN); DQ, DM and DQS inputs changing once
t
DD
RC (MIN);
t
t
CK (MIN); I
CK (MIN); DQ, DM, and DQS inputs changing
Specifications and Conditions – 128MB
IN
= V
t
t
RC =
RC =
t
CK =
t
CK =
REF
t
CK =
OUT
t
t
for DQ, DQS, and DM
RAS (MAX);
RC (MIN);
t
0.2V
CK (MIN); CKE = (LOW)
t
CK (MIN); I
= 0mA
t
CK (MIN); CKE = LOW
t
CK =
t
CK =
OUT
t
t
t
CK (MIN); Address
REFC =
REFC = 7.8125µs
= 0mA; Address
t
CK (MIN); DQ,
t
RFC (MIN)
t
RC =
t
15
T
CK =
A
t
RC
+70°C; V
64MB, 128MB, 256MB (x64, SR)
I
I
I
I
I
I
I
200-PIN DDR SDRAM SODIMM
SYM
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD0
DD1
DD5
DD6
DD7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
1,020
1,760
-335
500
720
200
120
240
880
780
DD
16
24
16
Q = +2.5V ±0.2V
MAX
1,520
-262
500
680
180
100
200
740
640
940
16
24
16
©2004 Micron Technology, Inc. All rights reserved.
-26A/
1,520
-265
480
620
180
100
200
740
640
940
16
24
16
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28,
21, 28,
20, 42
20, 42
20, 42
24, 44
20, 43
44
45
44
20
20
44
9