MT16HTF12864HY-53ED3 Micron Technology Inc, MT16HTF12864HY-53ED3 Datasheet - Page 7

• Manufacturer Part Number: MT16HTF12864HY-53ED3
• Description: MODULE DDR2 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864HY-53ED3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
Capacitance
AC Timing and Operating Conditions
Table 8:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
V
Symbol
IN
V
V
T
V
I
DD
, V
V
DD
I
CASE
DD
OZ
I
REF
I
OUT
Q
L
Absolute Maximum Ratings
Module and Component Speed Grade Table
Parameter
V
V
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
DDR2 SDRAM device operating temperature (case)
REF
REF
DD
DD
DD
Q supply voltage relative to V
L supply voltage relative to Vss
Module Speed Grade
supply voltage relative to V
Notes:
input 0V ≤ V
leakage current; V
Stresses greater than those listed in Table 7 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. For further information, refer to technical note TN-00-08: Thermal Applications, available
2. Refresh rate must double when T
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed using simulations
to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets,
available on Micron’s Web site. Module speed grades correlate with component speed
grades as shown in Table 8:
-80E
-800
-667
-53E
-40E
on Micron’s Web site at www.micron.com/technotes.
IN
≤0.95V; (All other pins not under
REF
= valid V
OUT
SS
SS
SS
≤ V
REF
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
level
IN
Q; DQs and
≤ V
DD
7
;
CASE
1
exceeds 85°C.
Command/Address,
RAS#, CAS#, WE#
CK, CK#, S#, CKE, ODT
DM
DQ, DQS, DQS#
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
Component Speed Grade
Electrical Specifications
-25E
-37E
-53E
-25
-3
Min
–1.0
–0.5
–0.5
–0.5
©2004 Micron Technology, Inc. All rights reserved.
–80
–40
–10
–10
–32
–40
0
Max
+2.3
+2.3
+2.3
+2.3
+80
+40
+10
+10
+32
+85
+95
Units
µA
µA
µA
°C
°C
V
V
V
V