DS25MB100EVK National Semiconductor, DS25MB100EVK Datasheet - Page 6

• Manufacturer Part Number: DS25MB100EVK
• Description: KIT EVAL FOR DS25MB100
• Manufacturer: National Semiconductor

Specifications of DS25MB100EVK

• Main Purpose: Interface, 2:1 Multiplexer
• Utilized Ic / Part: DS25MB100
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -

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LVCMOS DC SPECIFICATIONS
V
V
I
I
R
RECEIVER SPECIFICATIONS
V
V
R
DRIVER SPECIFICATIONS
V
V
Symbol
IH
IL
IH
IL
ID
ICM
ODB
PE
PU
ITD
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Supply Voltage (V
CMOS/TTL Input Voltage
CML Input/Output Voltage
Junction Temperature
Storage Temperature
Lead Temperature
Thermal Resistance, θ
Thermal Resistance, θ
Soldering, 4 seconds
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
Pull-High Resistance
Differential Input Voltage
Range (Note 9)
Common Mode Voltage at
Receiver Inputs
Input Differential
Termination (Note 3)
Output Differential
Voltage Swing without
Pre-Emphasis (Note 4)
Output Pre-Emphasis
Voltage Ratio
20*log(VODPE/VODB)
Parameter
CC
)
JA
JC
(Note 8)
V
V
AC Coupled Differential Signal
Below 1.25 Gbps
Above 1.25 Gbps
This parameter is not tested at production
Measured at receiver inputs reference to ground
On-chip differential termination between IN+ or IN−
R
DES_1=DES_0=0
DEL_1=DEL_0=0
Driver Pre-emphasis disabled
Running K28.7 pattern at 2.5 Gbps
See Figure 5 for test circuit.
R
Running K28.7 pattern at 2.5 Gbps
DEx_[1:0]=00
DEx_[1:0]=01
DEx_[1:0]=10
DEx_[1:0]=11
x=S for switch side Pre-emphasis control
x=L for line side Pre-emphasis control
See Figure 1 on waveform.
See Figure 5 for test circuit.
IN
IN
L
L
= 100Ω ±1%
= 100Ω ±1%
= V
= GND
CC
-65°C to +150°C
(Note 1)
(V
(V
-0.3V to 4V
CC
CC
26.2°C/W
3.3°C/W
-0.3V to
-0.3V to
+150°C
+260°C
+0.3V)
+0.3V)
Conditions
6
Recommended Operating Ratings
Thermal Resistance, Φ
ESD Rating (Note 10)
Supply Voltage
(V
Supply Noise Amplitude
Ambient Temperature
Case Temperature
CC
10 Hz to 2 GHz
HBM, 1.5 kΩ, 100 pF
CDM
MM
-GND)
1100
JB
Min
-0.3
100
100
-10
2.0
75
84
(Note 2)
3.135
Min
–40
1300
Typ
100
1.3
94
35
-3
-6
-9
0
Typ
3.3
1750
1560
1500
Max
+0.3
V
124
116
0.8
10
CC
3.465
Max
100
100
85
11.1°C/W
1.25 kV
Units
mV
mV
mV
mV
Units
350V
°C
°C
V
µA
µA
kΩ
dB
dB
dB
dB
6 kV
Ω
V
V
V
PP
P-P
P-P
P-P