2SC1212 Hitachi Semiconductor, 2SC1212 Datasheet
2SC1212
Related parts for 2SC1212
2SC1212 Summary of contents
Page 1
... Application Low frequency power amplifier Outline TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: 1. Value Silicon NPN Epitaxial ...
Page 2
... DC current tarnsfer ratio Base to emitter voltage V BE Collector to emitter V CE(sat) saturation voltage Gain bandwidth product f T Note: 1. The 2SC1212 and 2SC1212A are grouped 120 100 to 200 Maximum Collector Dissipation Curve 1.0 0.75 0.5 0. 100 Ambient temperature ...
Page 3
... C C 160 25 140 120 –25 100 80 60 0.01 0.02 0.05 1.0 0.2 Collector current I (A) C Typical Output Characteristics 1.0 0.8 0.6 0.4 0 (V) Collector to emitter voltage V CE Typical Transfer Characteristics 1 0.3 0.1 0.03 0.01 0.5 1.0 0 0.2 Base to emitter voltage V 2SC1212, 2SC1212A (V) CE 0.4 0.6 0.8 1.0 1.2 ( ...
Page 4
Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-126 Mod — — 0.67 g ...
Page 5
... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...