2SK3000 Hitachi Semiconductor, 2SK3000 Datasheet

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2SK3000

Manufacturer Part Number
2SK3000
Description
Silicon N Channel MOS FET Low Frequency Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3000
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
2SK3000ZY-90TL-E
Manufacturer:
RENESAS
Quantity:
8 000
Features
Outline
Low on-resistance
R
4V gate drive devices.
Small package (MPAK)
Expansive drain to source surge power capability
DS(on)
= 0. 25 typ. (V
Low Frequency Power Switching
GS
G
= 10 V, I
2
MPAK
Silicon N Channel MOS FET
D
= 450 mA)
D
S
2SK3000
1
3
3
2
1
1. Source
2. Gate
3. Drain
ADE-208-585 (Z)
December 1997
1st. Edition

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2SK3000 Summary of contents

Page 1

... Low Frequency Power Switching Features Low on-resistance typ. (V DS(on gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline G 2SK3000 Silicon N Channel MOS FET = 450 mA) D MPAK ADE-208-585 (Z) December 1997 Source 2. Gate 3 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. When using the glass epoxy board ( ...

Page 3

... Drain to Source Voltage V DS Note5 : When using the glass epoxy board (10mm x 10mm x 1mm ) Typical Transfer Characteristics 1 25°C 125° –25° Pulse Test Gate to Source Voltage V GS 2SK3000 50 µs 100 200 ( (V) 3 ...

Page 4

... Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 0.8 0.6 0.4 0 Static Drain to Source on State Resistance vs. Temperature 0.5 0 0.1 0 – Case Temperature 4 Pulse Test 0.03 0. 0.45 A Pulse Test 80 120 160 Tc (°C) Static Drain to Source on State Resistance vs ...

Page 5

... GS 2000 1000 500 200 100 0.05 0.1 (V) DS Reverse Drain Current vs 0 Source to Drain Voltage 2SK3000 Switching Characteristics t d(off d(on µs, duty < 0.2 0 Drain Current I (A) D Source to Drain Voltage ...

Page 6

... Switching Time Test Circuit Vin Monitor Vin Transient Thermal Resistance 100 m 1 Pulse Width PW (S) Vout Monitor D.U. V  td(on) Condition : Ta = 25°C When using the glass epoxy board t (10mm x 10mm x 1mm ) ...

Page 7

... Package Dimensions + 0.10 0.4 – 0.05 0.95 0.95 1.9 + 0.3 2.8 – 0.1 + 0.10 0.16 – 0. 0.15 Hitachi Code MPAK EIAJ SC–59A TO–236Mod. JEDEC 2SK3000 Unit ...

Page 8

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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