2SK1697 Hitachi Semiconductor, 2SK1697 Datasheet
2SK1697
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2SK1697 Summary of contents
Page 1
... High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive Outline 2SK1697 UPAK Gate G 2. Drain 3. Source 4 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the alumina ceramic board (12.5 3. Marking is “ ...
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... V — 1 — — 45 — rr 2SK1697 Unit Test conditions mA 100 mA ...
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... Power vs. Temperature Derating 1.5 1.0 0 Ambient Temperature Ta (° 0.3 0.1 0.03 0.01 0.1 100 150 Maximum Safe Operation Area Ta = 25°C 0 Drain to Source Voltage V (V) DS 100 ...
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Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...