STTA212 ST Microelectronics, Inc., STTA212 Datasheet

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STTA212

Manufacturer Part Number
STTA212
Description
Turboswitch - Ultra-fast High Voltage Diode
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Part Number:
STTA212S
Manufacturer:
ST
Quantity:
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Part Number:
STTA212S
Manufacturer:
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DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated
"freewheel mode" operations and is particulary
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGHETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
Symbol
I
V
V
F(RMS)
I
I
T
FRM
FSM
RRM
RSM
T
stg
j
V
TURBOSWITCH
t
rr
F
V
I
F(AV)
(max)
®
RRM
(typ)
switching IGBT or MOSFET in all
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
1200V
65ns
1.5V
2A
Parameter
ULTRA-FAST HIGH VOLTAGE DIODE
tp = 5 s F=5kHz square
tp = 10ms sinusoidal
suitable and efficient in motor control circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizing diodes secondary of SMPS as high
voltage rectifier diodes. They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.
SMC
- 65 to + 150
STTA212S
Value
1200
1200
125
10
20
25
Unit
°C
°C
V
V
A
A
A
1/8

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STTA212 Summary of contents

Page 1

... SMPS as snubber, clamping or demagnetizing diodes secondary of SMPS as high voltage rectifier diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes. Parameter F=5kHz square tp = 10ms sinusoidal STTA212S SMC Value Unit 1200 V 1200 V 10 ...

Page 2

... STTA212S THERMAL AND POWER DATA Symbol Parameter R Junction to lead thermal resistance th(j-I) P Conduction power dissipation 1 P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter V Forward voltage drop Reverse leakage current R ** Vto Threshold voltage rd Dynamic resistance Test pulses : * tp = 380 s, < ...

Page 3

... Fig. 6: Reverse recovery time versus dI F confidence). trr(ns) 400 350 300 250 200 150 100 50 0 140 160 180 200 0 20 STTA212S Tj=125°C VFM( IF=2*IF(av) IF=IF(av) dIF/dt(A/µ 100 120 140 160 IF=2*IF(av) IF=IF(av) dIF/dt(A/µ 100 120 140 160 180 200 ...

Page 4

... STTA212S Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 1.1 1.0 S factor 0.9 IRM 0.8 Tj(°C) 0 Fig. 9: Forward recovery time versus dI tfr(ns) 800 VFR=1.1*VF max. 700 IF=IF(av) 600 500 400 300 dIF/dt(A/µs) 200 4/8 Fig. 8: Transient peak forward voltage versus dI /dt ...

Page 5

... F = 1/T In such applications (fig D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 SWITCHING REVERSE LOSSES LOSSES in the diode in the diode DIODE: TURBOSWITCH T = t/T STTA212S Watts SWITCHING LOSSES in the transistor due to the diode IL LOAD 5/8 ...

Page 6

... STTA212S APPLICATION DATA (Cont’d) Fig SNUBBER DIODE. PWM 1/T = t/T Fig RECTIFIER DIODE. Fig STATIC CHARACTERISTICS 6/8 Fig DEMAGNETIZING DIODE. Conduction losses : Reverse losses : F(AV (RMS ...

Page 7

... Turn-off losses (in the diode RECTIFIER OPERATION Turn-off losses : t with non negligible serial inductance P3’ P3, P3’ and P5 are suitable for power MOSFET and IGBT I Fmax Turn-on losses : STTA212S ...

Page 8

... SMC Plastic 2.0 4.2 Ordering type Marking STTA212S T53 Epoxy meets UL94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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