PESD5V0S1BA,115 NXP Semiconductors, PESD5V0S1BA,115 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0S1BA,115
• Description: DIODE BIDIR ESD PROTECT SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S1BA,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 (Max) mm W x 1.8 (Max) mm L
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.5V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 100nA
• Peak Pulse Current: 12A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4053-2; 934058004115; PESD5V0S1BA T/R; PESD5V0S1BA T/R

NXP Semiconductors
5. Limiting values
PESD5V0S1BA_BB_BL_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol Parameter
ESD
Standard
IEC 61000-4-2, level 4 (ESD);
HBM MIL-STD 883; class 3
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see
Figure
Measured from pin 1 to pin 2.
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
electrostatic discharge
capability
1.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Rev. 04 — 20 August 2009
Figure 2
Low capacitance bidirectional ESD protection diodes
Conditions
IEC 61000-4-2 (contact
discharge)
HBM MIL-Std 883
Conditions
8/20 s
8/20 s
PESD5V0S1BA/BB/BL
Conditions
15 kV (air);
4 kV
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
65
65
8 kV (contact)
Figure
© NXP B.V. 2009. All rights reserved.
Max
130
12
150
Max
30
10
150
150
2.
Unit
W
A
Unit
kV
kV
C
C
C
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