PESD1LIN,115 NXP Semiconductors, PESD1LIN,115 Datasheet - Page 4

• Manufacturer Part Number: PESD1LIN,115
• Description: DIODE ESD PROTECTION SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD1LIN,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 15V
• Voltage - Breakdown: 17.1V
• Power (watts): 160W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 25 V
• Operating Voltage: 24 V
• Breakdown Voltage: 18.9 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 160 W
• Capacitance: 17 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 2.7 mm L x 1.1 mm H
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 25.4V
• Reverse Stand-off Voltage: 24V
• Leakage Current (max): 50nA
• Peak Pulse Current: 3A
• Test Current (it): 5mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4033-2; 934058897115; PESD1LIN T/R; PESD1LIN T/R

NXP Semiconductors
6. Characteristics
PESD1LIN_2
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
4
3
2
1
T
Peak pulse power as a function of exponential
pulse duration; typical values
amb
= 25 C
10
Table 8.
T
[1]
Symbol
V
I
V
C
V
r
RM
amb
dif
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
10
= 25 C unless otherwise specified.
2
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
10
3
006aaa164
t
p
( s)
Rev. 02 — 12 November 2008
10
4
Conditions
V
V
I
V
I
I
I
I
I
I
Fig 4.
R
PP
PP
PP
PP
R
R
RWM
RWM
R
P
= 5 mA
= 1 mA
= 1 mA
PP(25 C)
= 0 V; f = 1 MHz
= 1 A
= 5 A
= 1 A
= 3 A
P
PP
= 15 V
= 24 V
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
50
[1]
LIN bus ESD protection diode
Min
-
-
-
-
17.1
25.4
-
-
-
-
-
-
-
100
Typ
-
-
< 1
< 1
18.9
27.8
13
-
-
-
-
-
-
PESD1LIN
150
© NXP B.V. 2008. All rights reserved.
001aaa193
T
j
Max
15
24
50
50
20.3
30.3
17
25
44
40
70
225
300
( C)
200
Unit
V
V
nA
nA
V
V
pF
V
V
V
V
4 of 11