PESD3V3U1UT,215 NXP Semiconductors, PESD3V3U1UT,215 Datasheet - Page 10

DIODE ULOW ESD PROTECTION SOT23

PESD3V3U1UT,215

Manufacturer Part Number
PESD3V3U1UT,215
Description
DIODE ULOW ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD3V3U1UT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.8V
Power (watts)
80W
Polarization
Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
9 V
Operating Voltage
3.3 V
Breakdown Voltage
6.4 V
Termination Style
SMD/SMT
Peak Surge Current
5 A
Peak Pulse Power Dissipation
80 W
Capacitance
0.6 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.4 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4047-2
934059101215
PESD3V3U1UT T/R
PESD3V3U1UT T/R
NXP Semiconductors
9. Package outline
10. Packing information
PESDXU1UT_SER_2
Product data sheet
Table 9.
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Fig 8.
For further information and the availability of packing methods, see
Package outline SOT23 (TO-236AB)
Packing methods
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
1.4
1.2
1
Description
4 mm pitch, 8 mm tape and reel
3.0
2.8
1.9
3
PESDxU1UT series
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
[1]
0.15
0.09
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
10 of 13

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