PESD5V0L5UV,115 NXP Semiconductors, PESD5V0L5UV,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0L5UV,115
• Description: DIODE ESD PROTECT 5FOLD SS Mini6
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L5UV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.4V
• Power (watts): 25W
• Polarization: 5 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3(Max) mm W x 1.7(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4800-2; PESD5V0L5UV T/R; PESD5V0L5UV T/R; PESD5V0L5UV,115

NXP Semiconductors
PESDXL5UF_V_Y_2
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
P
(pF)
(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY
(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY
(W)
C
PP
10
d
10
25
20
15
10
1
5
0
2
T
pulse duration; typical values
f = 1 MHz; T
voltage; typical values
1
0
amb
= 25 C
1
10
amb
= 25 C
2
(1)
(2)
10
2
3
10
3
4
Low capacitance unidirectional fivefold ESD protection diode arrays
006aab139
006aab141
t
p
V
( s)
R
(V)
10
Rev. 02 — 8 January 2008
5
4
Fig 4. Relative variation of peak pulse power as a
Fig 6. Relative variation of reverse current as a
P
I
PP(25 C)
R(25 C)
P
I
PP
R
10
1.2
1.0
0.8
0.6
0.4
0.2
10
0
1
1
function of junction temperature; typical values
function of junction temperature; typical values
75
0
25
50
PESDxL5UF/V/Y
25
75
100
© NXP B.V. 2008. All rights reserved.
125
T
j
006aab140
006aab142
( C)
T
j
( C)
150
175
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