PESD5V0U4BW,115 NXP Semiconductors, PESD5V0U4BW,115 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0U4BW,115
• Description: DIODE ARRAY ESD BI-DIR SOT-665
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0U4BW,115

• Package / Case: SOT-665
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Channels: 4 Channels
• Operating Voltage: 5 V
• Breakdown Voltage: 6.5 V
• Capacitance: 2.9 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Mounting Style: SMD/SMT
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061953115

NXP Semiconductors
6. Characteristics
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Fig 2.
(pF)
C
d
3.0
2.6
2.2
1.8
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
1
amb
Table 9.
T
= 25 C
Symbol Parameter
Per diode
V
I
V
C
r
RM
amb
dif
2
RWM
BR
d
= 25 C unless otherwise specified.
3
reverse standoff
voltage
reverse leakage current V
breakdown voltage
diode capacitance
differential resistance
Characteristics
4
Ultra low capacitance bidirectional quadruple ESD protection arrays
006aab036
V
R
(V)
PESD5V0U4BF; PESD5V0U4BW
Rev. 01 — 15 August 2008
5
Conditions
I
f = 1 MHz
I
R
R
RWM
V
V
= 5 mA
= 1 mA
Fig 3.
R
R
= 0 V
= 5 V
V
= 5 V
CL
V
BR
V-I characteristics for a bidirectional
ESD protection diode
V
RWM
Min
-
-
5.5
-
-
-
I
I
RM
PP
I
R
I
I
I
RM
R
PP
Typ
-
5
6.5
2.9
1.9
-
© NXP B.V. 2008. All rights reserved.
Max
5
100
9.5
3.5
-
100
V
RWM
+
006aaa676
V
BR
Unit
V
nA
V
pF
pF
V
5 of 12
CL