PESD5V0U4BW,115 NXP Semiconductors, PESD5V0U4BW,115 Datasheet - Page 6

DIODE ARRAY ESD BI-DIR SOT-665

PESD5V0U4BW,115

Manufacturer Part Number
PESD5V0U4BW,115
Description
DIODE ARRAY ESD BI-DIR SOT-665
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD5V0U4BW,115

Package / Case
SOT-665
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
5.5V
Polarization
4 Channel Array - Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Channels
4 Channels
Operating Voltage
5 V
Breakdown Voltage
6.5 V
Capacitance
2.9 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
1.3 mm W x 1.7 mm L x 0.6 mm H
Mounting Style
SMD/SMT
Power (watts)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061953115
NXP Semiconductors
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Fig 4.
GND
GND
ESD clamping test setup and waveforms
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C Z
R Z
Z
= 330
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
Ultra low capacitance bidirectional quadruple ESD protection arrays
(DEVICE
UNDER
TEST)
DUT
PESD5V0U4BF; PESD5V0U4BW
Rev. 01 — 15 August 2008
450
RG 223/U
50
GND
GND
coax
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
clamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
ATTENUATOR
10
vertical scale = 10 V/div
horizontal scale = 100 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2008. All rights reserved.
50
006aab037
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