PRTR5V0U4Y,125 NXP Semiconductors, PRTR5V0U4Y,125 Datasheet - Page 3

DIODE ESD PROTECT SOT-363

PRTR5V0U4Y,125

Manufacturer Part Number
PRTR5V0U4Y,125
Description
DIODE ESD PROTECT SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PRTR5V0U4Y,125

Package / Case
SC-70-6, SC-88, SOT-363
Polarization
4 Channel Array - Bidirectional
Voltage - Breakdown
6V
Zener Voltage
7.5 V
Voltage Tolerance
20 %
Maximum Reverse Leakage Current
0.1 uA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Dimensions
1.35 mm W x 2.2 mm L x 1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Reverse Standoff (typ)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934060889125::PRTR5V0U4Y T/R::PRTR5V0U4Y T/R
NXP Semiconductors
6. Characteristics
Table 5.
T
7. Application information
PRTR5V0U4Y_1
Product data sheet
Symbol
C
I
V
V
LR
amb
BR
F
(I/O-GND)
= 25 C unless otherwise specified.
Characteristics
Parameter
input/output to ground
capacitance
reverse leakage current
breakdown voltage
forward voltage
7.1 IEEE 1394a/b protection
The PRTR5V0U4Y is optimized to protect both the IEEE 1394 physical layer and the
IEEE 1394 connector ports against ESD.
Fig 1.
Typical application for IEEE 1394a/b ESD protection
PHYSICAL
IEEE 1394
LAYER
Conditions
pins 1, 3, 4 and 6; V
V
pins 1, 3, 4 and 6 to ground; V
Zener diode; I = 1 mA
CC
= 3.0 V
TPBIAS
BUS PWR
TPA+
TPA
TPB+
TPB
Rev. 01 — 8 May 2008
Integrated quad ultra-low capacitance ESD protection
56
56
220 pF
I
= 0 V; f = 1 MHz;
1
2
3
56
56
5 k
I
= 3.0 V
1 F
1 nF
6
5
4
10 nF
Shld1
Shld2
TPA+
TPA
TPB+
TPB
PWR
1 M
GND
PRTR5V0U4Y
Min
-
-
6
-
7
1
6
5
4
3
2
8
CONNECTOR
Typ
1.0
-
-
0.7
1394
001aag050
© NXP B.V. 2008. All rights reserved.
Max
-
100
9
-
Unit
pF
nA
V
V
3 of 10

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