PRTR5V0U4Y,125 NXP Semiconductors, PRTR5V0U4Y,125 Datasheet - Page 6

• Manufacturer Part Number: PRTR5V0U4Y,125
• Description: DIODE ESD PROTECT SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PRTR5V0U4Y,125

• Package / Case: SC-70-6, SC-88, SOT-363
• Polarization: 4 Channel Array - Bidirectional
• Voltage - Breakdown: 6V
• Zener Voltage: 7.5 V
• Voltage Tolerance: 20 %
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Dimensions: 1.35 mm W x 2.2 mm L x 1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Reverse Standoff (typ): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060889125::PRTR5V0U4Y T/R::PRTR5V0U4Y T/R

NXP Semiconductors
PRTR5V0U4Y_1
Product data sheet
7.5 Universal microSD/TransFlash and SD-memory card protection
The PRTR5V0U4Y protects each data line of the microSD/TransFlash device against
ESD.
Fig 5.
Typical application for universal microSD/TransFlash and SD-memory card ESD
protection
DAT0
DAT1
DAT2
DAT3/CD
CMD
CLK
V
GND
CC
1
2
3
Rev. 01 — 8 May 2008
Integrated quad ultra-low capacitance ESD protection
6
5
4
1
2
3
PRTR5V0U4Y
6
5
4
© NXP B.V. 2008. All rights reserved.
TRANSFLASH
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