DSPIC30F3013-20I/SO Microchip Technology, DSPIC30F3013-20I/SO Datasheet - Page 156

• Manufacturer Part Number: DSPIC30F3013-20I/SO
• Description: IC DSPIC MCU/DSP 24K 28SOIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F3013-20I/SO

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 24KB (8K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 20
• Flash Memory Size: 24KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F301320ISO

dsPIC30F2011/2012/3012/3013
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70139F-page 156
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
No.
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP™ Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
4.5
3.0
40
40
—
—
—
—
—
MIN
MIN
1
Typ
100K
100
100
1M
10
10
10
—
—
—
—
—
2
4
(1)
Max
5.5
5.5
5.5
5.5
30
30
30
—
—
—
—
—
—
2
-40°C ≤ T
-40°C ≤ T
Units
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
ms
V
V
V
V
-40°C ≤ T
Using EECON to Read/Write
V
voltage
Provided no other specifications
are violated
Row Erase
-40°C ≤ T
V
voltage
Provided no other specifications
are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
© 2008 Microchip Technology Inc.
= Minimum operating
= Minimum operating
A
A
Conditions
≤ +85°C
≤ +85°C