STM8S105C4T6 STMicroelectronics, STM8S105C4T6 Datasheet - Page 59

MCU 16KB FLASH MEM 16MHZ 48LQFP

STM8S105C4T6

Manufacturer Part Number
STM8S105C4T6
Description
MCU 16KB FLASH MEM 16MHZ 48LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105C4T6

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
38
Number Of Timers
9
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8818

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STM8S105xx
10.3
Operating conditions
The device must be used in operating conditions that respect the parameters in the table
below. In addition, full account must be taken of all physical capacitor characteristics and
tolerances.
Symbol
Symbol
I
ΣI
(1)
(2)
connected to the external supply.
(3)
around the package between the V
(4)
If V
I
by V
corresponding V
(5)
characteristics.
(6)
absolute sum of the positive and negative injected currents (instantaneous values). These
results are based on characterization with ΣI
port pins of the device.
T
T
INJ(PIN)
INJ(PIN)
STG
J
INJ(PIN)
Negative injection disturbs the analog performance of the device. See note in
Data based on characterization results, not tested in production.
All power (V
I/O pins used simultaneously for high current source/sink must be uniformly spaced
I
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
IN
IN
maximum cannot be respected, the injection current must be limited externally to the
<V
value. A positive injection is induced by V
(4) (5)
SS
(4)
must never be exceeded. This is implicitly insured if V
. For true open-drain pads, there is no positive injection current, and the
DD
Ratings
Injected current on NRST pin
Injected current on OSCIN pin
Injected current on any other pin
Total injected current (sum of all I/O and control pins)
IN
, V
Ratings
maximum must always be respected
Storage temperature range
Maximum junction temperature
DDIO
, V
Table 18: Thermal characteristics
DDA
DocID14771 Rev 10
) and ground (V
DDIO
/V
SSIO
INJ(PIN)
pins.
SS
IN
(6)
, V
>V
SSIO
maximum current injection on four I/O
DD
while a negative injection is induced
, V
SSA
) pins must always be
Value
-65 to 150
150
Electrical characteristics
IN
maximum is respected.
(6)
Max.
±4
±4
±4
±20
(1)
INJ(PIN)
I2C interface
Unit
°C
Unit
is the
59/127

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