STM8S105C4T6 STMicroelectronics, STM8S105C4T6 Datasheet - Page 76

MCU 16KB FLASH MEM 16MHZ 48LQFP

STM8S105C4T6

Manufacturer Part Number
STM8S105C4T6
Description
MCU 16KB FLASH MEM 16MHZ 48LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105C4T6

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
38
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
38
Number Of Timers
9
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8818

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Electrical characteristics
10.3.4
76/127
(2)
small R
(3)
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
Data based on characterization results, not tested in production.
t
SU(HSE)
m
value. Refer to crystal manufacturer for more details
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
f
mcrit
m
m
HSI
m
m
L1
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
L2
mcrit
Parameter
= C: Grounded external capacitance
Frequency
R m
C m
L m
Resonator
HSE
C O
)
2
× R
Figure 20: HSE oscillator circuit diagram
Table 34: HSI oscillator characteristics
m
m
(2Co + C)
equation
C L1
C L2
DocID14771 Rev 10
Conditions
2
Resonator
OSCOUT
DD
OSCIN
and T
A
.
Min
R F
g m
Consumption
control
f HSE to core
Typ
16
STM8
Max
STM8S105xx
Unit
MHz

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