DSP56F801FA80E Freescale Semiconductor, DSP56F801FA80E Datasheet - Page 21

• Manufacturer Part Number: DSP56F801FA80E
• Description: IC DSP 80MHZ 8K FLASH 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: 56F8xxr

Specifications of DSP56F801FA80E

• Core Processor: 56800
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 11
• Program Memory Size: 20KB (10K x 16)
• Program Memory Type: FLASH
• Ram Size: 2K x 16
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Package: 48LQFP
• Family Name: 56F8xx
• Maximum Speed: 80 MHz
• Operating Supply Voltage: 3.3 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 11
• Interface Type: SCI/SPI
• On-chip Adc: 2(4-chx12-bit)
• Number Of Timers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Freescale Semiconductor
Program time
Erase time
Mass erase time
Endurance
Data Retention
PROG/ERASE to NVSTR set
up time
NVSTR hold time
NVSTR hold time (mass erase)
NVSTR to program set up time
Recovery time
Cumulative program
HV period
Program hold time
Address/data set up time
Address/data hold time
1. One cycle is equal to an erase program and read.
2. Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be
programmed twice before next erase.
3. Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
Operating Conditions:
Characteristic
2
1
The following parameters should only be used in the Manual Word Programming Mode
1
3
3
3
Table 3-7 Flash Timing Parameters
V
Symbol
T
T
T
T
T
T
T
E
D
T
SS
T
T
T
erase*
T
nvh1*
prog*
CYC
nvs*
nvh*
pgs*
me*
RET
rcv*
pgh
adh
ads
hv
= V
56F801 Technical Data, Rev. 17
SSA
= 0 V, V
10,000
Min
100
20
20
10
–
–
–
–
–
–
–
–
–
DD
= V
DDA
20,000
Typ
100
30
10
–
–
–
5
5
1
3
–
–
–
= 3.0–3.6V, T
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
A
= –40° to +85°C, C
cycles
years
Unit
ms
ms
ms
us
us
us
us
us
us
Flash Memory Characteristics
L
Figure
Figure
Figure
Figure
Figure
Figure 3-4
Figure 3-5
Figure 3-6
Figure 3-6
Figure 3-5
Figure 3-6
Figure 3-4
Figure 3-6
Figure 3-4
Figure 3-4
Figure 3-4
Figure 3-4
≤
Figure
50pF
3-4,
3-5,
3-4,
3-4,
3-5,
21