DSPIC30F6012A-20E/PF Microchip Technology, DSPIC30F6012A-20E/PF Datasheet - Page 58

• Manufacturer Part Number: DSPIC30F6012A-20E/PF
• Description: IC DSPIC MCU/DSP 144K 64TQFP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F6012A-20E/PF

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 52
• Program Memory Size: 144KB (48K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 64-TQFP, 64-VQFP
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 52
• Flash Memory Size: 144KB
• Supply Voltage Range: 2.5V To 5.5V
• Package: 64TQFP
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 68
• Interface Type: CAN/I2C/SPI/UART
• On-chip Adc: 16-chx12-bit
• Number Of Timers: 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT64PT4 - SOCKET TRAN ICE 64MQFP/TQFPAC164313 - MODULE SKT FOR PM3 64PFAC30F002 - MODULE SOCKET DSPIC30F 64TQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

dsPIC30F6011A/6012A/6013A/6014A
7.2
7.2.1
In order to erase a block of data EEPROM, the
NVMADRU and NVMADR registers must initially point
to the block of memory to be erased. Configure
NVMCON for erasing a block of data EEPROM, and
set the ERASE and WREN bits in the NVMCON
register. Setting the WR bit initiates the erase as
shown in
EXAMPLE 7-2:
7.2.2
The TBLPAG and NVMADR registers must point to the
block. Select erase a block of data Flash, and set the
ERASE and WREN bits in the NVMCON register. Set-
ting the WR bit initiates the erase as shown in
Example
EXAMPLE 7-3:
DS70143E-page 58
; Select data EEPROM block, ERASE, WREN bits
; Start erase cycle by setting WR after writing key sequence
; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete
; Select data EEPROM word, ERASE, WREN bits
; Start erase cycle by setting WR after writing key sequence
; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Erasing Data EEPROM
7-3.
Example
ERASING A BLOCK OF DATA
EEPROM
ERASING A WORD OF DATA
EEPROM
#0x4045,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
#0x4044,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
NVMCON
NVMKEY
NVMKEY
NVMCON
NVMKEY
NVMKEY
7-2.
DATA EEPROM BLOCK ERASE
DATA EEPROM WORD ERASE
; Initialize NVMCON SFR
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Initiate erase sequence
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Initiate erase sequence
© 2011 Microchip Technology Inc.