ST7FLITE29F1B6 STMicroelectronics, ST7FLITE29F1B6 Datasheet - Page 16
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ST7FLITE29F1B6
Manufacturer Part Number
ST7FLITE29F1B6
Description
IC MCU 8BIT 8K FLASH 20-DIP
Manufacturer
STMicroelectronics
Series
ST7r
Specifications of ST7FLITE29F1B6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
15
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Processor Series
ST7FLITE2x
Core
ST7
Data Bus Width
8 bit
Development Tools By Supplier
ST7FLITE-SK/RAIS, ST7MDT10-DVP3, ST7MDT10-EMU3, STX-RLINK
For Use With
497-5858 - EVAL BOARD PLAYBACK ST7FLITE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST7LITE2
DATA EEPROM (Cont’d)
5.3 MEMORY ACCESS
The Data EEPROM memory read/write access
modes are controlled by the E2LAT bit of the EEP-
ROM Control/Status register (EECSR). The flow-
chart in
access modes.
Read Operation (E2LAT=0)
The EEPROM can be read as a normal ROM loca-
tion when the E2LAT bit of the EECSR register is
cleared.
On this device, Data EEPROM can also be used to
execute machine code. Take care not to write to
the Data EEPROM while executing from it. This
would result in an unexpected code being execut-
ed.
Write Operation (E2LAT=1)
To access the write mode, the E2LAT bit has to be
set by software (the E2PGM bit remains cleared).
When a write access to the EEPROM area occurs,
Figure 7. Data EEPROM Programming Flowchart
16/133
1
Figure 7
describes these different memory
IN EEPROM AREA
READ MODE
READ BYTES
E2PGM=0
CLEARED BY HARDWARE
E2LAT=0
(with the same 11 MSB of the address)
the value is latched inside the 32 data latches ac-
cording to its address.
When PGM bit is set by the software, all the previ-
ous bytes written in the data latches (up to 32) are
programmed in the EEPROM cells. The effective
high address (row) is determined by the last EEP-
ROM write sequence. To avoid wrong program-
ming, the user must take care that all the bytes
written between two programming sequences
have the same high address: only the five Least
Significant Bits of the address can change.
At the end of the programming cycle, the PGM and
LAT bits are cleared simultaneously.
Note: Care should be taken during the program-
ming cycle. Writing to the same memory location
will over-program the memory (logical AND be-
tween the two write access data result) because
the data latches are only cleared at the end of the
programming cycle and by the falling edge of the
E2LAT bit.
It is not possible to read the latched data.
This note is illustrated by the
START PROGRAMMING CYCLE
E2PGM=1 (set by software)
WRITE UP TO 32 BYTES
0
IN EEPROM AREA
WRITE MODE
E2PGM=0
E2LAT=1
E2LAT=1
E2LAT
1
Figure
9.