MC908GT16CBE Freescale Semiconductor, MC908GT16CBE Datasheet - Page 41

• Manufacturer Part Number: MC908GT16CBE
• Description: IC MCU 16K FLASH 8MHZ SPI 42SDIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GT16CBE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 36
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 42-DIP (0.600", 15.24mm)
• Controller Family/series: HC08
• No. Of I/o's: 34
• Ram Memory Size: 512Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GT
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 4
• Operating Supply Voltage: 0 V to 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Package: 42SPDIP
• Family Name: HC08
• Maximum Speed: 8 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

2.6.2 Flash Control Register
The Flash control register (FLCR) controls Flash program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
2.6.3 Flash Page Erase Operation
Use the following procedure to erase a page (64 bytes) of Flash memory. A page consists of 64
consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 36-byte user interrupt
vectors area also forms a page. Any Flash memory page can be erased alone.
Freescale Semiconductor
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16Kbyte Flash array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
MC68HC908GT16 • MC68HC908GT8 • MC68HC08GT16 Data Sheet, Rev. 5.0
$FE08
Bit 7
0
0
Figure 2-3. Flash Control Register (FLCR)
= Unimplemented
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
PGM
Bit 0
0
Flash Memory
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