HD64F3642AH Renesas Electronics America, HD64F3642AH Datasheet - Page 178

IC H8 MCU FLASH 16K 64QFP

HD64F3642AH

Manufacturer Part Number
HD64F3642AH
Description
IC H8 MCU FLASH 16K 64QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD64F3642AH

Core Processor
H8/300L
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI
Peripherals
PWM, WDT
Number Of I /o
53
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 6 ROM
Table 6.16 AC Characteristics in PROM Mode
(Conditions: V
Item
Command write cycle
Address setup time
Address hold time
Data setup time
Data hold time
CE setup time
CE hold time
V
V
WE programming pulse width
WE programming pulse high time
OE setup time before command write
OE setup time before verify
Verify access time
OE setup time before status polling
Status polling access time
Program wait time
Erase wait time
Output disable time
Total auto-erase time
Notes: The CE, OE, and WE pins should be driven high during transitions of V
Rev. 6.00 Sep 12, 2006 page 156 of 526
REJ09B0326-0600
PP
PP
setup time
hold time
and from 12 V to 5 V.
* Input pulse level: 0.45 V to 2.4 V
Input rise time and fall time ≤ 10 ns
Timing reference levels: 0.8 V and 2.0 V for input; 0.8 V and 2.0 V for output
CC
= 5.0 V ±10%, V
PP
= 12.0 V ±0.6 V, V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CWC
AS
AH
DS
DH
CES
CEH
VPS
VPH
WEP
WEH
OEWS
OERS
VA
OEPS
SPA
PPW
ET
DF
AET
Min
120
0
60
50
10
0
0
100
100
70
40
0
6
120
25
9
0
0.5
SS
= 0 V, T
Typ
a
Max
500
120
11
40
30
= 25°C ±5°C)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
µs
ms
ns
s
PP
from 5 V to 12 V
Test
Conditions
Figure 6.20
Figure 6.21 *
Figure 6.22

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