DF36034GHJ Renesas Electronics America, DF36034GHJ Datasheet - Page 134
![MCU 3/5V 32K J-TEMP POR&LVD 64-Q](/photos/28/61/286103/64-bqfp__prqp0064gb-a_sml.jpg)
DF36034GHJ
Manufacturer Part Number
DF36034GHJ
Description
MCU 3/5V 32K J-TEMP POR&LVD 64-Q
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet
1.DF36057GFZV.pdf
(594 pages)
Specifications of DF36034GHJ
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SSU
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F36034GHJ
HD64F36034GHJ
HD64F36034GHJ
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Section 7 ROM
7.4
A software method using the CPU is employed to program and erase flash memory in the on-
board programming modes. Depending on the FLMCR1 setting, the flash memory operates in one
of the following four modes: Program mode, program-verify mode, erase mode, and erase-verify
mode. The programming control program in boot mode and the user program/erase control
program in user program mode use these operating modes in combination to perform
programming/erasing. Flash memory programming and erasing should be performed in
accordance with the descriptions in section 7.4.1, Program/Program-Verify and section 7.4.2,
Erase/Erase-Verify, respectively.
7.4.1
When writing data or programs to the flash memory, the program/program-verify flowchart shown
in figure 7.3 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to the flash memory without subjecting the chip to
voltage stress or sacrificing program data reliability.
1. Programming must be done to an empty address. Do not reprogram an address to which
2. Programming should be carried out 128 bytes at a time. A 128-byte data transfer must be
3. Prepare the following data storage areas in RAM: A 128-byte programming data area, a 128-
4. Consecutively transfer 128 bytes of data in byte units from the reprogramming data area or
5. The time during which the P bit is set to 1 is the programming time. Table 7.6 shows the
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
7. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 2 bits
Rev. 4.00 Mar. 15, 2006 Page 100 of 556
REJ09B0026-0400
programming has already been performed.
performed even if writing fewer than 128 bytes. In this case, H'FF data must be written to the
extra addresses.
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation according to table 7.4, and additional programming data
computation according to table 7.5.
additional-programming data area to the flash memory. The program address and 128-byte
data are latched in the flash memory. The lower 8 bits of the start address in the flash memory
destination area must be H'00 or H'80.
allowable programming times.
An overflow cycle of approximately 6.6 ms is allowed.
are B'00. Verify data can be read in words or in longwords from the address to which a dummy
write was performed.
Flash Memory Programming/Erasing
Program/Program-Verify
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