R5F61663RN50FPV Renesas Electronics America, R5F61663RN50FPV Datasheet - Page 268
![MCU FLASH 384K ROM 144-LQFP](/photos/28/61/286117/144-lqfp__plqp0144ka-a_sml.jpg)
R5F61663RN50FPV
Manufacturer Part Number
R5F61663RN50FPV
Description
MCU FLASH 384K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Specifications of R5F61663RN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R5F61663RN50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 9 Bus Controller (BSC)
(d) Address/data multiplexed I/O interface
The number of access cycles in data cycle of the address/data multiplexed I/O interface is the
same as that in the basic bus interface. The number of access cycles in address cycle can be
specified as two or three cycles by the ADDEX bit in MPXCR.
(e)
In the DRAM interface, the numbers of precharge cycles, row address output cycles, and column
address output cycles can be specified.
The number of precharge cycles can be specified as one to four cycles by bits TPC1 and TPC0 in
DRACCR. The number of row address output cycles can be specified as one to four cycles by bits
RCD1 and RCD0 in DRACCR. The number of column address output cycles can be specified as
two or three cycles by the CAST bit in DRAMCR. For the column address output cycle, program
wait (0 to 7 cycles) specified by WTCRB or external wait by WAIT can be inserted.
(f)
In the SDRAM interface, the numbers of precharge cycles, row address output cycles, and column
address output cycles, as well as clock suspend and write-precharge delay, can be specified by
DRACCR and WTCRB.
The number of precharge cycles can be specified as one to four cycles by bits TPC1 and TPC0 in
DRACCR. The number of row address output cycles can be specified as one to four cycles by bits
RCD1 and RCD0 in DRACCR. The number of column address output cycles during read access
can be specified as two to four cycles by bits W21 and W20 in WTCRB.
The cycles for clock suspend and write-precharge delay can be inserted by bits CKSPE and
TRWL in SDCR.
Rev. 2.00 Sep. 24, 2008 Page 234 of 1468
REJ09B0412-0200
DRAM Interface
SDRAM Interface
Number of access cycles in the address/data multiplexed I/O interface
= number of address output cycles (2, 3) + number of data output cycles (2, 3)
Number of access cycles in the DRAM interface
= number of precharge cycles (1 to 4) + number of row address output cycles (1 to 4)
+ number of CS extension cycles (0, 1, 2)
+ number of column address output cycles (2 or 3)
+ number of program wait cycles (0 to 7)
[+number of external wait cycles by the WAIT pin]
+ number of program wait cycles (0 to 7)
[+number of external wait cycles by the WAIT pin]
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