MC908AZ60AVFUE Freescale Semiconductor, MC908AZ60AVFUE Datasheet - Page 375

• Manufacturer Part Number: MC908AZ60AVFUE
• Description: IC MCU 61K FLASH 8.4MHZ 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908AZ60AVFUE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8.4MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 52
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 64-QFP
• Processor Series: HC08AZ
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8.4 MHz
• Number Of Programmable I/os: 52
• Number Of Timers: 8
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05CE, ZK-HC08AX-A, M68EM08AS/AZ60AE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 15 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

28.1.14 FLASH Memory Characteristics
1.
2. If the page erase time is longer than
3. If the mass erase time is longer than
4.
5.
6. The minimum row erase endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase cycles.
7. The minimum row program endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many program
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.
Freescale Semiconductor
FLASH Program Bus Clock Frequency
FLASH Read Bus Clock Frequency
FLASH Page Erase Time
FLASH Mass Erase Time
FLASH PGM/ERASE to HVEN Set Up Time
FLASH High Voltage Hold Time
FLASH High Voltage Hold Time (Mass)
FLASH Program Hold Time
FLASH Program Time
FLASH Return to Read Time
FLASH Cumulative Program HV Period
FLASH Row Erase Endurance
FLASH Row Program Endurance
FLASH Data Retention Time
t
f
t
t
cycles.
READ is defined as the frequency range for which the FLASH memory can be read.
RCV
HV
NVS
is defined as the cumulative high voltage programming time to the same row before next erase.
+
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump by clearing HVEN to logic 0.
t
NVH
+ t
PGS
+ (
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
t
PROG
X 64)
Characteristic
(8)
(6)
≥ t
(7)
t
HV
t
ERASE
MERASE
max.
(M
(M
IN
), there is no erase-disturb, but it reduces the endurance of the FLASH memory.
IN
)
,
there is no erase-disturb, but it reduces the endurance of the FLASH memory.
t
Symbol
f
M
t
READ
ERASE
t
ERASE
t
t
t
RCV
t
t
PROG
HV
t
NVH
PGS
—
NVS
NVH
(5)
(4)
L
(1)
(2)
(3)
t
HV
10,000
10,000
32K
Min
100
must satisfy this condition:
10
30
10
—
1
1
4
5
5
1
Electrical Specifications
8.4M
Max
40
—
—
—
—
—
—
—
—
—
—
4
cycles
cycles
years
MHz
Unit
Hz
ms
ms
ms
μs
μs
μs
μs
μs
μs
375