DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 808
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
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Section 17 ROM
Erasure
Erasure is performed with the erasure selection and block erasure command.
Firstly, erasure is selected by the erasure selection command and the boot program then erases the
specified block. The command should be repeatedly executed if two or more blocks are to be
erased. Sending a block-erasure command from the host with the block number H'FF will stop the
erasure operating. On completion of erasing, the boot program will wait for selection of
programming or erasing.
The sequences of the issuing of erasure selection commands and the erasure of data are shown in
figure 17.87.
(1) Erasure Selection
The boot program will transfer the erasure program. User MAT data is erased by the transferred
erasure program.
Command
• Command, H'48, (1 byte): Erasure selection
Response
• Response, H'06, (1 byte): Response for erasure selection
Rev.7.00 Feb. 14, 2007 page 774 of 1108
REJ09B0089-0700
After the erasure program has been transferred, the boot program will return ACK.
Repeat
H'48
H'06
Host
Figure 17.87 Erasure Sequence
Preparation for Erasure (H'48)
Erasure (Erased Block Number)
Erasure (H'FF)
ACK
ACK
ACK
Transfer of Erasure
Boot Program
Erasure
Program
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