DF2317VTE25 Renesas Electronics America, DF2317VTE25 Datasheet - Page 884
DF2317VTE25
Manufacturer Part Number
DF2317VTE25
Description
MCU 3V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of DF2317VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
79
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2317VTE25
HD64F2317VTE25
HD64F2317VTE25
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Section 20 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
Rev.7.00 Feb. 14, 2007 page 850 of 1108
REJ09B0089-0700
2. Programming time per 128 bytes. (In the H8S/2318, H8S/2317, H8S/2315, and
3. Time to erase one block. (In the H8S/2318, H8S/2317, H8S/2315, and H8S/2314,
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
7. Minimum number of times for which all characteristics are guaranteed after rewriting
8. Reference value for 25°C (as a guideline, rewriting should normally function up to this
9. Data retention characteristic when rewriting is performed within the specification range,
The wait time after P bit setting (z) should be changed as follows according to the
Number of writes (n)
H8S/2314, indicates the total time during which the P bit in flash memory control
register 1 (FLMCR1) is set. In the H8S/2319, indicates the total time during which the
P1 bit and P2 bit in the flash memory control registers (FLMCR1, FLMCR2) are set.
Does not include the program-verify time.)
indicates the total time during which during which the E1 bit in FLMCR1 and the E2 bit
in FLMCR2 are set. Does not include the erase-verify time.)
actual set value of z so as not to exceed the maximum programming time (t
number of writes (n).
[In additional programming]
Number of writes (n)
wait time after E bit setting (z) and the maximum number of erases (N):
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
P
E
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
(max) =
i=1
Σ
N
wait time after P bit setting (z)
z = 30 μs
z = 200 μs
z = 10 μs
E
(max)), the following relationship applies between the
P
(max)).
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