D64F3437TFLH16V Renesas Electronics America, D64F3437TFLH16V Datasheet - Page 469
D64F3437TFLH16V
Manufacturer Part Number
D64F3437TFLH16V
Description
MCU 5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet
1.HD64F3437STF16V.pdf
(755 pages)
Specifications of D64F3437TFLH16V
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D64F3437TFLH16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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20.1
20.1.1
Table 20.1 illustrates the principle of operation of the H8/3437F’s on-chip flash memory.
Like EPROM, flash memory is programmed by applying a high gate-to-drain voltage that draws
hot electrons generated in the vicinity of the drain into a floating gate. The threshold voltage of a
programmed memory cell is therefore higher than that of an erased cell. Cells are erased by
grounding the gate and applying a high voltage to the source, causing the electrons stored in the
floating gate to tunnel out. After erasure, the threshold voltage drops. A memory cell is read like
an EPROM cell, by driving the gate to the high level and detecting the drain current, which
depends on the threshold voltage. Erasing must be done carefully, because if a memory cell is
overerased, its threshold voltage may become negative, causing the cell to operate incorrectly.
Section 20.4.6 shows an optimal erase control flowchart and sample program.
Table 20.1 Principle of Memory Cell Operation
Memory
cell
Memory
array
(60-kbyte Dual-Power-Supply Flash Memory Version)
Flash Memory Overview
Flash Memory Operating Principle
Program
Vd
Vg = V
PP
0 V
Vd
Section 20 ROM
V
0 V
0 V
PP
Erase
Vs = V
PP
Open
Open
Open
0 V
V
0 V
PP
Read
Vd
Vg
0 V
Vd
V
0 V
0 V
437
CC
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