D64F3437TFLH16V Renesas Electronics America, D64F3437TFLH16V Datasheet - Page 552
D64F3437TFLH16V
Manufacturer Part Number
D64F3437TFLH16V
Description
MCU 5V 60K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Datasheet
1.HD64F3437STF16V.pdf
(755 pages)
Specifications of D64F3437TFLH16V
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number:
D64F3437TFLH16V
Manufacturer:
Renesas Electronics America
Quantity:
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21.4
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
21.4.1
Follow the procedure shown in the program/program-verify flowchart in figure 21.12 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
For the wait times (x, y, z, , ,
control registers 1 and 2 (FLMCR1, FLMCR2) and the maximum number of writes (N), see Flash
Memory Characteristics in section 23, Electrical Characteristics.
Following the elapse of (x) s or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 32-byte program data is stored in the program data area and reprogram data
area, and the 32-byte data in the reprogram data area written consecutively to the write addresses.
The lower 8 bits of the first address written to must be H'00, H'20, H'40, H'60, H'80, H'A0, H'C0,
or H'E0. Thirty-two consecutive byte data transfers are performed. The program address and
program data are latched in the flash memory. A 32-byte data transfer must be performed even if
writing fewer than 32 bytes; in this case, H'FF data must be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set a value greater than (y + z +
program mode (program setup) is carried out by setting the PSU bit in FLMCR2, and after the
elapse of (y) s or more, the operating mode is switched to program mode by setting the P bit in
FLMCR1. The time during which the P bit is set is the flash memory programming time. Make a
program setting so that the time for one programming operation is within the range of (z) s.
520
2. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
previously programmed addresses.
+ ) s as the WDT overflow period. After this, preparation for
after setting/clearing individual bits in flash memory
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