ATMEGA88V-10AU Atmel, ATMEGA88V-10AU Datasheet - Page 19
ATMEGA88V-10AU
Manufacturer Part Number
ATMEGA88V-10AU
Description
IC AVR MCU 8K 10MHZ 1.8V 32TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA88V-10AU
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TQFP, 32-VQFP
Processor Series
ATMEGA8x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
2-Wire, SPI, USART, Serial
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
23
Number Of Timers
3 bit
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Package
32TQFP
Device Core
AVR
Family Name
ATmega
Maximum Speed
10 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA88V-10AU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATMEGA88V-10AUR
Manufacturer:
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7.4
7.4.1
7.4.2
2545S–AVR–07/10
EEPROM Data Memory
EEPROM Read/Write Access
Preventing EEPROM Corruption
Figure 7-4.
The ATmega48/88/168 contains 256/512/512 bytes of data EEPROM memory. It is organized
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
“Memory Programming” on page 284
in SPI or Parallel Programming mode.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
“Preventing EEPROM Corruption” on page 19
CC
Address
clk
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Data
Data
WR
CPU
RD
CC,
the EEPROM data can be corrupted because the supply voltage is
Compute Address
T1
Memory Access Instruction
contains a detailed description on EEPROM Programming
Address valid
for details on how to avoid problems in these
T2
Table
7-2. A self-timing function, however,
ATmega48/88/168
Next Instruction
T3
19
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