MAX6882ETE+ Maxim Integrated Products, MAX6882ETE+ Datasheet - Page 10

• Manufacturer Part Number: MAX6882ETE+
• Description: IC SEQUENCE/SUPERVISOR 16TQFN
• Manufacturer: Maxim Integrated Products
• Type: Sequencerr

Specifications of MAX6882ETE+

• Number Of Voltages Monitored: 2
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: Adjustable/Selectable
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TQFN Exposed Pad
• Monitored Voltage: - 0.3 V to + 6 V
• Manual Reset: Resettable
• Watchdog: No Watchdog
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Supply Current (typ): 1100 uA
• Maximum Power Dissipation: 1349 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
10
MAX6880
EP
14
16
17
18
19
20
21
22
23
24
______________________________________________________________________________________
MAX6881
EP
10
11
12
13
14
15
16
—
9
1
PIN
MAX6882
10
11
12
13
14
15
16
EP
—
—
—
MAX6883
11
12
13
14
15
16
EP
—
—
—
—
PG/RST
GATE3
GATE2
GATE1
NAME
OUT3
OUT2
OUT1
IN3
IN2
IN1
EP
Power-Good Output, Open-Drain. PG_RST asserts high t
after all OUT_ voltages exceed the V
Channel 3 Monitored Output Voltage. Connect OUT3 to the source
of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE3 to V
FET when power-up is complete.
Channel 2 Monitored Output Voltage. Connect OUT2 to the source
of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE2 to V
FET when power-up is complete.
Channel 1 Monitored Output Voltage. Connect OUT1 to the source
of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
boosts GATE1 to V
FET when power-up is complete.
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the
internal undervoltage lockout (V
sequencing functionality. Each IN_ input is simultaneously
monitored by SET_ inputs to ensure all supplies have stabilized
before power-up is enabled. If IN_ is connected to ground or left
unconnected and SET_ is above 0.5V, then no sequencing control
is performed on that channel. Each IN_ is internally pulled down by
a 100kΩ resistor.
Exposed Paddle. Connect exposed paddle to ground.
Pin Description (continued)
IN3
IN2
IN1
+ 5V to fully enhance the external n-channel
+ 5V to fully enhance the external n-channel
+ 5V to fully enhance the external n-channel
FUNCTION
ABP
= 2.7V) to enable the
TH_PG
thresholds.
TIMEOUT