SI3552DV-T1-GE3 Vishay, SI3552DV-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI3552DV-T1-GE3
• Description: MOSFET N/P-CH D-S 30V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3552DV-T1-GE3TR

Notes
a.
b.
www.vishay.com
2
Si3552DV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate-Source Charge
Gate Drain Charge
Gate-Drain Charge
Gate Resistance
Gate Resistance
Turn On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain
Source-Drain
Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
I
I
DS(
DS(on)
t
t
I
I
t
t
I
I
GS(th)
GS(th)
D(
D(on)
V
V
Q
Q
Q
Q
d( ff)
d(off)
d(
d(on)
GSS
GSS
DSS
DSS
g
g
Q
Q
R
R
t
t
SD
SD
t
t
t
t
rr
f
fs
gs
gd
r
f
f
g
g
g
d
)
)
)
V
V
I
I
V
V
DS
D
D
V
I
DS
DS
D
DS
^ - 1 A, V
^ - 1 A, V
I
= - 15 V, V
^ 1 A, V
I
F
F
= 15 V, V
= - 24 V, V
V
V
V
V
V
V
V
= 24 V, V
= - 1.05 A, di/dt = 100 A/ms
V
V
V
V
I
= 1.05 A, di/dt = 100 A/ms
V
V
V
V
GS
I
S
V
V
DS
DS
V
DS
DS
GS
DS
15 V V
S
DS
DS
DD
GS
DD
DD
DS
DS
GS
DS
= - 1.05 A, V
= 1.05 A, V
= - 4.5 V, I
= V
= 0 V V
= 0 V, V
= - 5 V, V
= - 10 V, I
= - 15 V, I
= V
= - 24 V, V
= - 15 V, R
= 24 V, V
= 5 V, V
= 4.5 V, I
= 15 V, R
= 15 V, R
= 10 V, I
= 10 V, I
N-Channel
N-Channel
P-Channel
N-Channel
P-Channel
P Channel
GEN
GEN
GEN
Test Condition
GS
1 V R
GS
GS
GS
GS
GS
, I
, I
= 10 V, R
= - 10 V, R
= - 10 V, R
GS
GS
= 0 V, T
= - 5 V, I
D
= 5 V, I
D
= 0 V, T
GS
GS
D
D
D
D
= - 250 mA
D
D
GS
GS
= 250 mA
L
L
GS
GS
5 V I
L
= "20 V
= "20 V
= 2.5 A
= - 1.8 A
= 2.5 A
= - 1.8 A
= 2.0 A
= - 1.2 A
= 15 W
= 15 W
= 10 V
= - 10 V
= 15 W
= 0 V
= 0 V
= 0 V
= 0 V
1 W
D
J
D
J
G
= 55_C
= 1.8 A
G
G
= 55_C
= - 1.8 A
= 6 W
= 6 W
= 6 W
1 8 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
- 1.0
1.0
0.5
- 5
5
3
S-31725—Rev. B, 18-Aug-03
0.085
0.165
0.140
0.298
- 0.83
Typ
0.81
4.3
2.4
2.1
2.4
0.7
0.9
0.7
0.8
12
13
12
35
30
Document Number: 70971
7
8
9
5
7
"100
"100
Max
0.105
0.200
0.175
0.360
- 1.10
1.10
3.2
3.6
2.4
11
11
12
14
18
20
18
11
60
60
- 1
- 5
1
5
8
Unit
nA
nA
mA
mA
nC
nC
ns
ns
W
W
W
W
V
V
A
A
S
S
V
V