SI3552DV-T1-GE3 Vishay, SI3552DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3552DV-T1-GE3
• Description: MOSFET N/P-CH D-S 30V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3552DV-T1-GE3TR

Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
V
8
6
4
2
0
GS
0
0
= 10 thru 7 V
0.01
0.1
V
2
1
GS
10
1
On-Resistance vs. Drain Current
= 4.5 V
-4
1
V
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
DS
Output Characteristics
2
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Single Pulse
2
3
2 V
4
10
3
V
GS
-3
6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
= 10 V
5
4
5 V
4 V
3 V
6
5
7
Square Wave Pulse Duration (sec)
10
-2
300
240
180
120
10
60
8
6
4
2
0
0
-1
0
0
C
rss
1
V
V
6
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
2
Capacitance
12
Vishay Siliconix
1
C
iss
T
3
C
= - 55_C
25_C
18
Si3552DV
NCHANNEL
PCHANNEL
4
www.vishay.com
24
5
125_C
10
30
6
5