SI3552DV-T1-GE3 Vishay, SI3552DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3552DV-T1-GE3
• Description: MOSFET N/P-CH D-S 30V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3552DV-T1-GE3TR

Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 1.8 A
1
On-Resistance vs. Drain Current
V
= 15 V
GS
1
V
DS
Q
= 4.5 V
1
Output Characteristics
g
2
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
V
2
GS
2V
3
= 10 thru 5 V
2
4
3
V
GS
5
4 V
3 V
3
= 10 V
4
6
5
7
4
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
50
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 2.5 A
1
5
V
V
= 10 V
DS
GS
T
C
Transfer Characteristics
J
0
oss
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
2
Capacitance
25
C
iss
Vishay Siliconix
50
15
3
T
25_C
C
= - 55_C
75
Si3552DV
NCHANNEL
20
4
100
www.vishay.com
125_C
25
5
125
150
30
6
3