SI3552DV-T1-GE3 Vishay, SI3552DV-T1-GE3 Datasheet - Page 7

MOSFET N/P-CH D-S 30V 6-TSOP

SI3552DV-T1-GE3

Manufacturer Part Number
SI3552DV-T1-GE3
Description
MOSFET N/P-CH D-S 30V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3552DV-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N And P Channel
Drain Source Voltage Vds
30V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
1.15W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3552DV-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
Vishay Siliconix
1
1
= P
t
2
DM
Z
thJA
thJA
100
Si3552DV
t
t
(t)
1
2
PCHANNEL
= 130_C/W
www.vishay.com
600
10
7

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