SI3552DV-T1-GE3 Vishay, SI3552DV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3552DV-T1-GE3
• Description: MOSFET N/P-CH D-S 30V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3552DV-T1-GE3TR

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6
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
10
10
8
6
4
2
0
1
0.00
- 50
0
V
I
- 25
D
Source-Drain Diode Forward Voltage
DS
= 1.8 A
V
T
= 15 V
0.3
1
SD
J
= 150_C
Q
0
I
- Source-to-Drain Voltage (V)
D
g
T
Threshold Voltage
= 250 mA
- Total Gate Charge (nC)
J
- Temperature (_C)
25
Gate Charge
0.6
2
50
0.9
3
T
75
J
= 25_C
100
1.2
4
125
1.5
150
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
- 50
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 1.8 A
I
D
= 10 V
2
V
T
GS
= 1 A
J
0
- Junction Temperature (_C)
0.1
- Gate-to-Source Voltage (V)
25
4
Time (sec)
I
D
50
= 1.8 A
S-31725—Rev. B, 18-Aug-03
1
Document Number: 70971
6
75
PCHANNEL
100
8
125
10
150
10
30