AT91SAM7S64C-AU Atmel, AT91SAM7S64C-AU Datasheet - Page 139

IC ARM7 MCU 32BIT 64K 64LQFP

AT91SAM7S64C-AU

Manufacturer Part Number
AT91SAM7S64C-AU
Description
IC ARM7 MCU 32BIT 64K 64LQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet

Specifications of AT91SAM7S64C-AU

Package / Case
64-LQFP
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Speed
55MHz
Number Of I /o
32
Core Processor
ARM7
Program Memory Type
FLASH
Ram Size
16K x 8
Program Memory Size
64KB (64K x 8)
Data Converters
A/D 8x10b
Oscillator Type
Internal
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity
I²C, SPI, SSC, UART/USART, USB
Core Size
16/32-Bit
Core
ARM7TDMI
Package
64LQFP
Device Core
ARM7TDMI
Family Name
AT91
Maximum Speed
55 MHz
Operating Supply Voltage
1.8|3.3 V
Data Bus Width
32 Bit
Number Of Programmable I/os
32
Interface Type
SPI/TWI/USART/USB
On-chip Adc
8-chx10-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
AT91SAM7S64B-AU::AT91SAM7S64B-AU

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20.3.4.1
20.3.4.2
6175K–ATARM–30-Aug-10
Flash Read Command
Flash Write Command
This command is used to read the Flash contents. The memory map is accessible through this
command. Memory is seen as an array of words (32-bit wide). The read command can start at
any valid address in the memory plane. This address must be word-aligned. The address is
automatically incremented.
Table 20-22. Read Command
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-23. Write Command
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. How-
ever, the lock bit is automatically set at the end of the Flash write operation. As a lock region is
composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. How-
ever, before programming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL
commands.
Read/Write
Write
Write
Read
Read
...
Read
Read/Write
Write
Write
Write
Write
Write
Write
• before access to any page than the current one
• at the end of the number of words transmitted
DR Data
(Number of Words to Read) << 16 | READ
Address
Memory [address]
Memory [address+4]
...
Memory [address+(Number of Words to Read - 1)* 4]
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
AT91SAM7S Series Preliminary
139

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