MC13212 Freescale Semiconductor, MC13212 Datasheet - Page 62
![IC TXRX RF 2.4GHZ FLSH 32K 71LGA](/photos/14/22/142235/mc13212_sml.jpg)
MC13212
Manufacturer Part Number
MC13212
Description
IC TXRX RF 2.4GHZ FLSH 32K 71LGA
Manufacturer
Freescale Semiconductor
Series
MC1321xr
Datasheet
1.1321XCSK-BDM.pdf
(70 pages)
Specifications of MC13212
Frequency
2.4GHz
Data Rate - Maximum
250kbps
Modulation Or Protocol
802.15.4 Zigbee
Applications
General Purpose
Power - Output
3dBm
Sensitivity
-92dBm
Voltage - Supply
1.8 V ~ 3.6 V
Current - Receiving
42mA
Current - Transmitting
35mA
Data Interface
PCB, Surface Mount
Memory Size
32kB Flash, 2kB RAM
Antenna Connector
PCB, Surface Mount
Operating Temperature
-40°C ~ 85°C
Package / Case
71-LGA
Mounting Style
SMD/SMT
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC13212
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
MC13212R2
Manufacturer:
FREESCALE
Quantity:
340
6.4.4
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
V
62
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
DD
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Non-volatile Memory.
0 < f
0 < f
T
T = 25°C
L
supply.
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
FLASH Specifications
4
2
(2)
Characteristic
1
3
(2)
(2)
MC13211/212/213 Technical Data, Rev. 1.8
Table 21. FLASH Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
100,000
Typical
20,000
4000
100
9
4
Freescale Semiconductor
Max
6.67
200
3.6
3.6
3.6
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V