APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 6

• Manufacturer Part Number: APT80GP60JDQ3
• Description: IGBT 600V 151A 462W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT80GP60JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 80A
• Current - Collector (ic) (max): 151A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 9.84nF @ 25V
• Power - Max: 462W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT80GP60JDQ3; APT80GP60JDQ3MI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Switching
t
Energy
d(off)
I
C
D.U.T.
90%
V
CE
10%
t
f
APT60DQ60
A
Collector Voltage
Collector Current
Gate Voltage
0
T
J
= 125 °C
10%
Switching
Figure 22, Turn-on Switching Waveforms and Definitions
Energy
t
d(on)
5%
Figure 24, E ON1 Test Circuit
t
r
V
TEST
10%
100uH
A
DRIVER*
A
90%
*DRIVER SAME TYPE AS D.U.T.
Collector Current
5 %
Collector Voltage
V
Gate Voltage
CLAMP
I
C
V
CE
D.U.T.
T
J
= 125 °C
B