MWI100-12A8 IXYS, MWI100-12A8 Datasheet - Page 3

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MWI100-12A8

Manufacturer Part Number
MWI100-12A8
Description
MOD IGBT SIXPACK RBSOA 1200V E3
Manufacturer
IXYS
Datasheet

Specifications of MWI100-12A8

Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 100A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
6.3mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
640W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
160A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
160
Ic80, Tc = 80°c, Igbt, (a)
110
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
14.6
Rthjc, Max, Igbt, (k/w)
0.19
If25, Tc = 25°c, Diode, (a)
200
If80, Tc = 80°c, Diode, (a)
130
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWI100-12A8
Manufacturer:
VISHAY
Quantity:
5 600
Part Number:
MWI100-12A8
Quantity:
60
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
I
V
I
C
C
GE
300
250
200
150
100
50
15
10
200
150
100
A
V
0
5
0
50
A
0
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
4
V
T
CE
VJ
= 20 V
5
100
= 25°C
1
6
200
2
T
7
VJ
V
GE
V
I
= 125°C
C
CE
= 17 V
= 600 V
= 100 A
300
3
8
V
V
CE
T
GE
VJ
Q
= 25°C
9
G
400
4
13 V
10
nC
15 V
V
11 V
9 V
V
500
5
11
I
I
C
RM
I
F
300
250
200
150
100
300
250
200
150
100
240
180
120
50
A
50
A
60
A
0
0
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics
Fig. 6 Typ. turn off characteristics
I
RM
T
VJ
T
V
I
F
VJ
R
= 125°C
= 100 A
1
= 600 V
= 125°C
200
of free wheeling diode
of free wheeling diode
1
T
2
VJ
= 125°C
400
V
MWI 100-12 A8
GE
3
= 17 V
2
600
T
VJ
V
-di/dt
4
V
F
= 25°C
CE
800
A/μs
5
13 V
3
MWI00-12A8
11 V
15 V
V
9 V
1000
t
V
rr
6
20070912a
80
60
40
20
0
ns
3 - 4
t
rr

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