MWI100-12A8 IXYS, MWI100-12A8 Datasheet - Page 4

• Manufacturer Part Number: MWI100-12A8
• Description: MOD IGBT SIXPACK RBSOA 1200V E3
• Manufacturer: IXYS

Specifications of MWI100-12A8

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 100A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 6.3mA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 640W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 160A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic80, Tc = 80°c, Igbt, (a): 110
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 14.6
• Rthjc, Max, Igbt, (k/w): 0.19
• If25, Tc = 25°c, Diode, (a): 200
• If80, Tc = 80°c, Diode, (a): 130
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
250
200
150
100
mJ
40
30
20
10
A
50
mJ
25
20
15
10
0
0
5
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
E on
E on
V
V
R
T
VJ
200
CE
GE
G
= 6.8 Ω
= 600 V
= ±15 V
= 125°C
10
times versus collector current
times versus gate resistor
RBSOA
40
400
R
T
VJ
G
20
= 6:8 Ω
600
= 125°C
V
V
I
T
C
VJ
CE
GE
80
= 600 V
= ±15 V
= 100 A
= 125°C
800 1000 1200 1400
30
R
I
G
C
120
40
V
CE
A
Ω
t d(on)
t d(on)
160
50
12
ns
10
8
6
4
2
0
10
8
6
4
2
0
ns
V
t
t
E
E
Z
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
25
mJ
20
15
10
Fig. 8 Typ. turn off energy and switching
30
20
10
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
0.0001
5
0
1
0
0
0
V
V
R
T
VJ
CE
GE
G
V
V
I
T
times versus collector current
times versus gate resistor
C
CE
GE
VJ
0.001
= 600 V
= 6.8 Ω
= ±15 V
= 125°C
= 600 V
= ±15 V
10
= 100 A
= 125°C
50
single pulse
0.01
MWI 100-12 A8
20
100
0.1
30
R
G
I
C
150
t
40
1
A
MWI100-12A8
diode
IGBT
20070912a
Ω
s
4 - 4
200
10
50
10
75
50
25
0
n
0
n