STE48NM50 STMicroelectronics, STE48NM50 Datasheet - Page 3

• Manufacturer Part Number: STE48NM50
• Description: MOSFET N-CH 550V 48A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE48NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 450 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3170-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
I
V
SDM
g
t
t
C
SD
C
C
Q
d(on)
d(off)
Q
fs
I
I
R
I
2. Pulse width limited by safe operating area.
Q
Q
Q
rrm
rrm
SD
t
t
t
oss
t
t
iss
rss
rr
rr
c
gs
gd
r
f
(1)
G
g
rr
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
V
V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(see Figure 14)
V
V
(see Figure 18)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DS
DS
DD
DD
GS
DD
DD
G
= 4.7
= 48 A, V
= 40 A, di/dt = 100 A/µs,
= 40 A, di/dt = 100 A/µs,
> I
= 25V, f = 1 MHz, V
= 250V, I
= 400V, I
= 10V
= 100 V, T
= 100 V, T
D(on)
Test Conditions
Test Conditions
V
x R
GS
GS
D
D
j
j
= 48 A,
DS(on)max,
= 10 V
= 25°C
= 150°C
= 24 A
= 0
GS
I
D
= 0
= 24A
Min.
Min.
3700
Typ.
Typ.
11.2
610
520
680
1.7
7.8
20
80
40
35
18
23
44
87
23
42
30
33
STE48NM50
Max.
Max.
117
192
1.5
48
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
µC
µC
S
ns
ns
A
A
V
A
A
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