STE48NM50 STMicroelectronics, STE48NM50 Datasheet - Page 5

• Manufacturer Part Number: STE48NM50
• Description: MOSFET N-CH 550V 48A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STE48NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 450 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3170-5

Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
STE48NM50
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