BF862,235 NXP Semiconductors, BF862,235 Datasheet - Page 3

• Manufacturer Part Number: BF862,235
• Description: JFET N-CH 20V 25MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF862,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 20 V
• Gate-source Cutoff Voltage: - 0.8 V
• Gate-source Breakdown Voltage: - 20 V
• Drain Current (idss At Vgs=0): 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
Note
1. Soldering point of the gate lead.
2000 Jan 05
handbook, halfpage
V
V
V
I
I
P
T
T
R
DS
G
stg
j
DS
DG
GS
tot
N-channel junction FET
th j-s
SYMBOL
SYMBOL
(mW)
P tot
400
300
200
100
0
0
Fig.2 Power derating curve.
drain-source voltage
drain-gate voltage
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering
point
40
80
PARAMETER
PARAMETER
120
T s (°C)
MCD808
160
3
T
note 1
s
 90 C; note 1
CONDITIONS
CONDITIONS






65

MIN.
VALUE
200
Product specification
20
20
20
40
10
300
+150
150
MAX.
BF862
UNIT
K/W
V
V
V
mA
mA
mW
C
C
UNIT