BF862,235 NXP Semiconductors, BF862,235 Datasheet - Page 4

• Manufacturer Part Number: BF862,235
• Description: JFET N-CH 20V 25MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF862,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 20 V
• Gate-source Cutoff Voltage: - 0.8 V
• Gate-source Breakdown Voltage: - 20 V
• Drain Current (idss At Vgs=0): 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Common source; T
2000 Jan 05
V
V
V
I
I
y
g
C
C
e
f
j
GSS
DSS
T
os
n
= 25 C; unless otherwise specified.
(BR)GSS
GS
GSoff
N-channel junction FET
iss
rss
fs
SYMBOL
SYMBOL

gate-source breakdown voltage
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
drain-source current
common source forward transfer
admittance
common source output conductance
input capacitance
reverse transfer capacitance
equivalent noise input voltage
transition frequency
amb
= 25 C; V
PARAMETER
PARAMETER
GS
= 0; V
DS
= 8 V; unless otherwise specified.
I
V
V
V
V
GS
DS
DS
GS
GS
= 1 A; V
= 0; I
= 8 V; I
= 15 V; V
= 0; V
T
T
f = 1 MHz
f = 1 MHz
f = 100 kHz
4
CONDITIONS
j
j
= 25 C
= 25 C
G
CONDITIONS
DS
= 1 mA
D
= 1 A
= 8 V
DS
DS
= 0
= 0
20

0.3

10
35





MIN.
MIN.


0.8


45
180
10
1.9
0.8
715
TYP.
TYP.
Product specification

1
1.2
1
25

400




MAX.
MAX.
BF862
V
V
V
nA
mA
mS
S
pF
pF
nV/Hz
MHz
UNIT
UNIT