BF862,235 NXP Semiconductors, BF862,235 Datasheet - Page 6

• Manufacturer Part Number: BF862,235
• Description: JFET N-CH 20V 25MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF862,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 20 V
• Gate-source Cutoff Voltage: - 0.8 V
• Gate-source Breakdown Voltage: - 20 V
• Drain Current (idss At Vgs=0): 25 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2000 Jan 05
handbook, halfpage
handbook, halfpage
N-channel junction FET
V
Fig.7
V
Fig.9
DS
DS
−10
−10
(mA)
(nA)
−10
−10
I G
I D
= 8 V; T
= 8 V; T
30
20
10
−1
−2
−4
0
4
2
−1
0
Drain current as a function of gate-source
Gate current as a function of drain-gate
voltage; typical values.
voltage; typical values.
j
j
= 25 C.
= 25 C.
−0.8
5
I D = 20 mA
−0.6
10
−0.4
15
V GS (V)
−0.2
20
10 mA
1 mA
0.1 mA
V DG (V)
I GSS
MCD813
MCD815
max
typ
min
25
0
6
handbook, halfpage
handbook, halfpage
V
Fig.8
V
Fig.10 Input and reverse transfer capacitance as
DS
DS
(mA)
(pF)
I D
C
= 8 V; T
= 8 V; f = 1 MHz; T
12
20
16
12
8
4
0
8
4
0
−8
0
Drain current as a function of drain-source
voltage; typical values.
functions of gate-source voltage; typical
values.
j
= 25 C.
−6
j
= 25 C.
4
−4
C rs
C is
8
Product specification
−2
V DS (V)
V GS = 0 V
V GS (V)
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
MCD816
MCD814
BF862
12
0